Interferometric lithography exposure tool for 180-nm structures

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 3048, Issue , 1997, Pages 248-254

  Zaidi, Saleem H ^a   Bmeck, S R J ^a   Schellenberg, F M ^b,c   MacKay, R Scott ^b   Uekert, K ^d   Persoff, J J ^d  

^a UNIVERSITY OF NEW MEXICO   (United States)

^b SEMATECH   (United States)

^c KLA Tencor   (United States)

^d Interserv   (United States)

Author keywords

180 nm CD; 300 mm wafer; Interferometric lithography

Indexed keywords

EID: 85076462627     PISSN: 0277786X     EISSN: 1996756X     Source Type: Conference Proceeding    
DOI: 10.1117/12.275785     Document Type: Conference Paper

References (5)

1. The National Technology Roadmap for Semiconductors, SIA, 1994
2. S. H. Zaidi and S. R. J. Brueck, "Multiple Exposure Interferometric Lithography", Jour. Vac. Sci. Tech. Bli, 658 (1993).
3. H. Zaidi and S. R. J. Brueck, "Multiple Exposure Interferometric Lithography", in Optical/Laser Microlithography VII, T. Brunner, ed., SPIE 2197, 869 (1994).
4. X. Chen, S. H. Zaidi, S. R. J. Brueck and D. J. Devine, "Interferometric lithography of sub-micrometer sparse hole arrays for fieldemission applications," Jour. Vac. Sci. Tech. B14, 3339-3349 (1996).
5. X. Chen, Z. Zhang, S. R. J. Brueck, R. A. Carpio, J. S. Petersen, "Process Development for 180-nm Scructures using Interferometric Lithography and I-Line Resist," this volume, for a detailed discussion of process development issues.