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Volumn 38, Issue 21, 2005, Pages 3953-3957
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Investigation of compensation effect for isothermal crystallization in glassy Se80-xTe20Mx (M ≤ Cd, Ge, Sb) alloys
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Author keywords
[No Author keywords available]
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Indexed keywords
ACTIVATION ENERGY;
AMORPHOUS MATERIALS;
CRYSTALLIZATION;
DIELECTRIC RELAXATION;
DIFFUSION IN SOLIDS;
ELECTRIC CONDUCTIVITY;
GLASS;
ISOTHERMS;
AMORPHOUS SEMICONDUCTORS;
DC CONDUCTIVITY MEASUREMENTS;
ELECTRONIC CONDUCTION;
ISOTHERMAL CRYSTALLIZATION;
SELENIUM COMPOUNDS;
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EID: 27544482936
PISSN: 00223727
EISSN: None
Source Type: Journal
DOI: 10.1088/0022-3727/38/21/018 Document Type: Article |
Times cited : (8)
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References (35)
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