A large area CMOS monolithic active pixel sensor for extreme ultra violet spectroscopy and imaging

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5301, Issue , 2004, Pages 175-185

  Prydderch, Mark ^a   Waltham, Nick ^a   Morrissey, Quentin ^a   French, Marcus ^a   Turchetta, Renato ^a   Pool, Peter ^b  

^a RUTHERFORD APPLETON LABORATORY   (United Kingdom)

^b E2V TECHNOLOGIES   (United Kingdom)

Author keywords

Back thinning; CMOS sensor; EUV; Extreme ultra violet; Large format

Indexed keywords

CHARGE COUPLED DEVICES; CMOS INTEGRATED CIRCUITS; IMAGE PROCESSING; IMAGING TECHNIQUES; LIGHT MODULATION; PHOTODIODES; SILICON WAFERS; ULTRAVIOLET SPECTROSCOPY;

BACK-THINNING; CMOS SENSOR; EUV; EXTREME ULTRA-VIOLET; LARGE FORMAT;

IMAGE SENSORS;

EID: 8844235683     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.526401     Document Type: Conference Paper

References (3)

1. M.L.Prydderch et al., A 512×512 CMOS Monolithic Active Pixel Sensor with Integrated ADCs for Space Science, Nuclear Instruments and Methods A 512 (2003) 358-367.
2. N. Waltham, M. French, M. Prydderch, Q. Morrissey, R. Turchetta, A. Marshall, J. King, and G. Woodhouse, (2002), CMOS Active Pixel Sensor developments at the Rutherford Appleton Laboratory, Proc. of Workshop on Scientific Detectors for Astronomy, June 2002, Hawaii
3. H.C.Mapson-Menard, C.M. Castelli, C.J. Eyles, M.L. Prydderch, and N.R. Waltham, (2002), Performance evaluation of an Active Pixel Sensor test structure for space science applications. Nuclear Inst. and Methods in Physics Research, A Special issue: Proceedings of the 6th International Conference on Position-Sensitive Detectors - Edited by A. Wells, G.W. Fraser, I. Duerdoth, A.R. Faruqi.