Body-tied double-gate SONOS flash (omega flash) memory device built on bulk Si wafer

Device Research Conference - Conference Digest, DRC

Volumn 2003-January, Issue , 2003, Pages 133-134

  Cho, Il Hwan ^a   Park, Tai Su ^a,b   Choi, Si Young ^b   Lee, Jong Duk ^a   Lee, Jong Ho ^c  

^a Seoul National University   (South Korea)

^b SAMSUNG Electronics   (South Korea)

^c Kyungpook National University   (South Korea)

Author keywords

Computer science; Etching; Fabrication; FinFETs; Flash memory; Ion implantation; Materials science and technology; Research and development; Silicon compounds; SONOS devices

Indexed keywords

COMPUTER SCIENCE; ETCHING; FABRICATION; ION IMPLANTATION; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; SILICON COMPOUNDS; SILICON WAFERS;

BODY TIED; DOUBLE GATE; FINFETS; MATERIALS SCIENCE AND TECHNOLOGY; RESEARCH AND DEVELOPMENT; SI WAFER; SONOS DEVICES; SONOS FLASH MEMORY;

FLASH MEMORY;

EID: 33646720123     PISSN: 15483770     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/DRC.2003.1226904     Document Type: Conference Paper

References (3)

1. C.S. PAN, at al., IEEE. Electron Devices, vol 37, p1439, 1990.
2. D. Hisamoto, at al., IEEE.Electron Devices, vol 47,p2320, 2000.
3. I.H. Cho et al., JKPS. 2002 accepted.