Desorption of InSb(001) native oxide and surface smoothing induced by low temperature annealing under molecular hydrogen flow

Journal of Applied Physics

Volumn 101, Issue 2, 2007, Pages

  Tessler, R ^a   Saguy, C ^a   Klin, O ^b   Greenberg, S ^b   Weiss, E ^b   Akhvlediani, R ^a   Edrei, R ^a   Hoffman, A ^a  

^a TECHNION ISRAEL INSTITUTE OF TECHNOLOGY   (Israel)

^b SCD SemiConductor Devices   (Israel)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; AUGER ELECTRON SPECTROSCOPY; DESORPTION; STOICHIOMETRY; SURFACE MORPHOLOGY; ULTRAHIGH VACUUM;

LOW TEMPERATURE ANNEALING; MOLECULAR HYDROGEN FLOW; SURFACE SMOOTHING; SURFACE STOICHIOMETRY;

INDIUM COMPOUNDS;

EID: 33847745032     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2431091     Document Type: Article

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