AlGaN/GaN devices for future power switching systems

Technical Digest - International Electron Devices Meeting, IEDM

Volumn 2005, Issue , 2005, Pages 377-380

  Ueda, Daisuke ^a   Murata, Tomohiro ^a   Hikita, Masahiro ^a   Nakazawa, Satoshi ^a   Kuroda, Masayuki ^a   Ishida, Hidetoshi ^a   Yanagihara, Manabu ^a   Inoue, Kaoru ^a   Ueda, Tetsuzo ^a   Uemoto, Yasuhiro ^a   Tanaka, Tsuyoshi ^a   Egawa, Takashi ^b  

^a PANASONIC CORPORATION   (Japan)

^b NAGOYA INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

POWER SWITCHING SYSTEMS;

ELECTRIC POWER SYSTEMS; HETEROJUNCTIONS; SEMICONDUCTOR DEVICES; SILICON; SWITCHING SYSTEMS;

POWER ELECTRONICS;

EID: 33847731809     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)

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3. S.Yoshida, et al, "Low On-Voltage Operation AlGaN/GaN Schottky Barrier Diode with Dual Schottky Structure", IEICE Trans. Electronics Vol.E88-C, No.4, pp.690-693, 2005
4. S. Yoshida, et al, "A New GaN Based Field Effect Schottky Barrier Diode with a Very Low On-Voltage", Proc. on ISPSD 04, pp.323-326, 2004
5. H. Ishikawa et al, JJAP vol.38, Part2 No.5A, L492-494, 1999
6. M. Hikita, et al, IEDM Tech. Dig., pp.803-806, 2004
7. M. Kuroda, et al. "Normally-off Operation of Non-polar AlGaN/GaN HFETs Grown on R-plane Sapphire", Ex, Abs. SSDM 2005, pp.470-471