Wafer-scale fabrication of infrared detectors based on tunneling displacement transducers

Sensors and Actuators, A: Physical

Volumn 134, Issue 2, 2007, Pages 575-581

  Ajakaiye, Olaleye ^a   Grade, John ^b   Shin, Choongsoo ^a   Kenny, Thomas ^a  

^a Stanford University   (United States)

^b Iolon Inc   (United States)

Author keywords

Detector; Golay cell; Infrared; Thermal; Tunneling; Wafer scale

Indexed keywords

ELECTRON TUNNELING; TRANSDUCERS; WSI CIRCUITS;

GOLAY CELL; TUNNELING DISPLACEMENT TRANSDUCERS; TUNNELING SENSORS;

INFRARED DETECTORS;

EID: 33847421313     PISSN: 09244247     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sna.2005.07.028     Document Type: Article

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