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Volumn 2005, Issue , 2005, Pages 199-202

Development of GaN-based micro chemical sensor nodes

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL TOXINS; MICRO CHEMICAL SENSOR NODES; REMOTE DETECTION;

EID: 33847324855     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ICSENS.2005.1597670     Document Type: Conference Paper
Times cited : (12)

References (12)
  • 1
    • 21544461610 scopus 로고    scopus 로고
    • S. Morkoç, G.B. Strite, M.E. Gao, B. Lin, Sverdlov and M. Burns H. (1994). Large-Band-Gap Sic, III-V Nitride, And II-VI ZnSe-Based Semiconductor-Device Technologies. Journal of Applied Physics 76(3): 1363-1398.
    • S. Morkoç, G.B. Strite, M.E. Gao, B. Lin, Sverdlov and M. Burns H. (1994). "Large-Band-Gap Sic, III-V Nitride, And II-VI ZnSe-Based Semiconductor-Device Technologies." Journal of Applied Physics 76(3): 1363-1398.
  • 3
    • 0001590229 scopus 로고    scopus 로고
    • Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N-and Ga-face AlGaN/GaN heterostructures
    • O. Ambacher, J. Smart, J.R. Shealy, N.G. Weimann, K. Chu, et al. (1999). "Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N-and Ga-face AlGaN/GaN heterostructures." Journal of Applied Physics 85(6): 3222-3233.
    • (1999) Journal of Applied Physics , vol.85 , Issue.6 , pp. 3222-3233
    • Ambacher, O.1    Smart, J.2    Shealy, J.R.3    Weimann, N.G.4    Chu, K.5
  • 4
    • 0142038457 scopus 로고    scopus 로고
    • Two dimensional electron gases induced by spontaneous and piezoelectric polarization charges in undoped and doped AlGaN/GaN heterostructures
    • O. Ambacher, B. Foutz, J. Smart, J.R. Shealy, N.G. Weimann, et al. (2000). "Two dimensional electron gases induced by spontaneous and piezoelectric polarization charges in undoped and doped AlGaN/GaN heterostructures." Journal of Applied Physics 87(1): 334-344.
    • (2000) Journal of Applied Physics , vol.87 , Issue.1 , pp. 334-344
    • Ambacher, O.1    Foutz, B.2    Smart, J.3    Shealy, J.R.4    Weimann, N.G.5
  • 6
    • 0036508494 scopus 로고    scopus 로고
    • GaN-based heterostructures for sensor applications
    • M. Stutzmann, et al. (2002). "GaN-based heterostructures for sensor applications." Diamonds and Related Materials 11: 886-891.
    • (2002) Diamonds and Related Materials , vol.11 , pp. 886-891
    • Stutzmann, M.1
  • 8
    • 3342917494 scopus 로고    scopus 로고
    • GaN-based diodes and transistors for chemical, gas, biological and pressure sensing
    • S.J. Pearton, et al. (2004). "GaN-based diodes and transistors for chemical, gas, biological and pressure sensing." Journal of Physics: Condensed Matter 16: R961-R994.
    • (2004) Journal of Physics: Condensed Matter , vol.16
    • Pearton, S.J.1
  • 9
    • 0037198506 scopus 로고    scopus 로고
    • Observation of ion-induced changes in the channel current of high electron mobility AlGaN/GaN transistors (HEMT)
    • R. Neuberger, G. Müller, M. Eickhoff, O. Ambacher, M. Stutzmann (2002). "Observation of ion-induced changes in the channel current of high electron mobility AlGaN/GaN transistors (HEMT)." Materials Science and Engineering B93: 143-146.
    • (2002) Materials Science and Engineering , vol.B93 , pp. 143-146
    • Neuberger, R.1    Müller, G.2    Eickhoff, M.3    Ambacher, O.4    Stutzmann, M.5
  • 10
    • 0242366639 scopus 로고    scopus 로고
    • AlGaN/GaN HEMT based liquid sensors
    • R. Mehandru, et al. (2004). "AlGaN/GaN HEMT based liquid sensors." Solid-State Electronics 48: 351-353.
    • (2004) Solid-State Electronics , vol.48 , pp. 351-353
    • Mehandru, R.1
  • 11
    • 20944442514 scopus 로고    scopus 로고
    • Detection of halide ions with AlGaN/GaN high electron mobility transistors
    • art#173502
    • B.S. Kang, et al. (2005). "Detection of halide ions with AlGaN/GaN high electron mobility transistors." Applied Physics Letters 86: art#173502.
    • (2005) Applied Physics Letters , vol.86
    • Kang, B.S.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.