InGaAs/InP DHBTs with A 75nm collector, 20nm base demonstrating 544 GHz fτ, BVCEO = 3.2V, and BVCBO = 3.4V

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn 2006, Issue , 2006, Pages 96-99

  Griffith, Zach ^a   Rodwell, Mark J W ^a   Fang, Xiao Ming ^b   Loubychev, Dmitri ^b   Wu, Ying ^b   Fastenau, Joel M ^b   Liu, Amy W K ^b  

^a University of California   (United States)

^b IQE INC   (United States)

Author keywords

InP heterojunction bipolar transistor

Indexed keywords

CAPACITANCE; ELECTRON TRANSITIONS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DOPING; SUPERLATTICES;

DOUBLE HETEROJUNCTION BIPOLAR TRANSISTORS (DHBT); ELECTRON TRANSIT TIMES; MESA STRUCTURE; SUPERLATTICE GRADE;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 33847129171     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (9)

1. MJ.W. Rodwell et al., "Submicron Scaling of HBTs" IEEE Trans. on Electron Devices, Vol. 48, pp. 2606-2624, November 2001.
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8. Bandprof, Semiconductor Device Simulation Tool, Prof. W. Frensley, University of Texas, Dallas.
9. W. Liu, Handbook of III-V Heterojunction Bipolar Transistors, John Wiley and Sons Inc., 1998.