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Volumn 61, Issue 7, 2007, Pages 1580-1582

Morphology and collective I-V characteristics of template synthesized nano metal-semiconductor heterojunctions

Author keywords

I V characteristics; Nano Zn Se heterojunctions; Resonant tunneling diodes; Template synthesis

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRODEPOSITION; ETCHING; NANOSTRUCTURED MATERIALS; RESONANT TUNNELING; SCANNING ELECTRON MICROSCOPY; SYNTHESIS (CHEMICAL);

EID: 33847038386     PISSN: 0167577X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.matlet.2006.07.174     Document Type: Article
Times cited : (7)

References (15)
  • 2
    • 0003611381 scopus 로고    scopus 로고
    • Bhargava R. (Ed), The Institution of Electrical Engineers, London, United Kingdom
    • In: Bhargava R. (Ed). Properties of Wide Band Gap II-VI Semiconductors, INSPEC (1997), The Institution of Electrical Engineers, London, United Kingdom
    • (1997) Properties of Wide Band Gap II-VI Semiconductors, INSPEC
  • 3
    • 0030084093 scopus 로고    scopus 로고
    • (Washington, D.C.)
    • Alivisatos A.P. Science 271 (1996) 933 (Washington, D.C.)
    • (1996) Science , vol.271 , pp. 933
    • Alivisatos, A.P.1
  • 5
    • 33847037428 scopus 로고    scopus 로고
    • IIT's 2nd Undergraduate Research Conference Abstracts, (1997) p. 22.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.