Diameter dependence of current-voltage characteristics of ultrasmall area AlSb-InAs resonant tunneling diodes with diameters down to 20 nm

Applied Physics Letters

Volumn 70, Issue 15, 1997, Pages 2025-2027

  Nomoto, K ^a   Taira, K ^a   Suzuki, T ^a   Hase, I ^a   Hiroshima, H ^b   Komuro, M ^b  

^a SONY CORPORATION   (Japan)

^b ELECTROTECHNICAL LABORATORY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0013132235     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.118772     Document Type: Article

References (9)

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