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Volumn 108-109, Issue , 2005, Pages 553-560
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Defect behaviour in deuterated and non-deuterated n-type si
c
SINTEF ICT
(Norway)
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Author keywords
Defects; Deuterium; DLTS; Hydrogen; Si
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Indexed keywords
ANNEALING;
DEEP LEVEL TRANSIENT SPECTROSCOPY;
DEFECTS;
HYDROGEN;
OXYGEN;
SEMICONDUCTOR DEVICE MANUFACTURE;
SILICON;
SILICON WAFERS;
DEUTERIUM PLASMA;
DIODE DETECTORS;
DIVACANCIES;
DLTS SPECTRA;
ELECTRICALLY ACTIVE DEFECTS;
HIGH PURITY;
INTERSTITIAL OXYGEN;
OXYGEN CENTRES;
DEUTERIUM;
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EID: 33847005310
PISSN: 10120394
EISSN: 16629779
Source Type: Book Series
DOI: 10.4028/www.scientific.net/SSP.108-109.553 Document Type: Conference Paper |
Times cited : (4)
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References (11)
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