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Volumn 108-109, Issue , 2005, Pages 553-560

Defect behaviour in deuterated and non-deuterated n-type si

Author keywords

Defects; Deuterium; DLTS; Hydrogen; Si

Indexed keywords

ANNEALING; DEEP LEVEL TRANSIENT SPECTROSCOPY; DEFECTS; HYDROGEN; OXYGEN; SEMICONDUCTOR DEVICE MANUFACTURE; SILICON; SILICON WAFERS;

EID: 33847005310     PISSN: 10120394     EISSN: 16629779     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/SSP.108-109.553     Document Type: Conference Paper
Times cited : (4)

References (11)
  • 3
    • 84954502346 scopus 로고    scopus 로고
    • edited by T. Diaz de la Rubia, S. Coffa, P. A. Stolk and C. S. Rafferty, Mater. Res. Soc. Symp. Proc. No. 469 (Materials Research Society, Pittsburg
    • N. Keskitalo, A. Hallen, J. Lalita and B. G. Svensson: Defects and Diffusion in Silicon Processing, edited by T. Diaz de la Rubia, S. Coffa, P. A. Stolk and C. S. Rafferty, Mater. Res. Soc. Symp. Proc. No. 469 (Materials Research Society, Pittsburg, 1997), p. 233
    • (1997) Defects and Diffusion in Silicon Processing
    • Keskitalo, N.1    Hallen, A.2    Lalita, J.3    Svensson, B.G.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.