Proton-implanted shallow-ridge quantum-cascade laser

IEEE Journal of Quantum Electronics

Volumn 42, Issue 5, 2006, Pages 490-493

  Semtsiv, Mykhaylo P ^a   Dressler, Sebastian ^a   Müller, Uwe ^a   Knigge, Steffen ^b   Ziegler, Mathias ^c   Masselink, William Ted ^a  

^a HUMBOLDT UNIVERSITY   (Germany)

^b LEIBNIZ INSTITUT FÜR HÖCHSTFREQUENZTECHNIK   (Germany)

^c MAX BORN INSTITUT   (Germany)

Author keywords

Mid infrared; Proton implantation; Quantum cascade laser (qcl); Shallow ridge laser

Indexed keywords

ACTIVE REGIONS; CARRIER TRAPS; CHARACTERISTIC TEMPERATURE; HEAT DISSIPATION; HEAT FLOWS; HETEROSTRUCTURES; INJECTION CURRENTS; INP; LATERAL SPREADING; LATTICE-MATCHED; MIDINFRARED; PROTON IMPLANTATION; RIDGE LASER; ROOM TEMPERATURE; STRAIN-COMPENSATED; TEMPERATURE STABILITY;

HETEROJUNCTIONS; INDIUM; INFRARED DEVICES; PROTONS; QUANTUM CASCADE LASERS;

INFRARED LASERS;

EID: 33846969678     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/JQE.2006.874012     Document Type: Article

References (11)

1. M. Beck, D. Hofstetter, T. Aellen, J. Faist, U. Oesterle, M. Ilegems, E. Gini, and H. Melchior, "Continuous wave operation of a midinfrared semiconductor laser at room temperature," Science, vol.295, pp. 301-305, Jan. 2002.
2. J. S. Yu, S. Slivken, A. Evans, J. David, and M. Razeghi, "Very high average power at room temperature from A λ≈5.9-μm quantum-cascade lasers," Appl. Phys. Lett., vol.82, pp. 3397-3399, May 2003.
3. A. Evans, J. S. Yu, J. David, L. Doris, K. Mi, S. Slivken, and M. Razeghi, "High-temperature, high-power, continuous-wave operation of buried heterostracture quantum-cascade lasers," Appl. Phys. Lett., vol.84, pp. 314-316, Jan. 2004.
4. C. Gmachl, F. Capasso, J. Faist, A. L. Hutchinson, A. Tredicucci, D. L. Sivco, J. N. Baillargeon, S. G. Chu, and A. Y. Cho, "Continuous-wave and high-power pulsed operation of index-coupled distributed feedback quantum cascade laser at A λ≈8.5 μm," Appl. Phys. Lett., vol.72, pp. 1430-1432, Mar. 1998.
5. C. D. Farmer, P. T. Keighfiey, C. N. Ironside, C. R. Stanley, L. R. Wilson, and J. W. Cockburn, "A quantum, cascade laser fabricated using planar native-oxide layers," Appl. Phys. Lett., vol.77, pp. 25-27, Jul. 2000.
6. H. Page, S. Dhillon, M. Calligaro, V. Ortiz, and C. Sirtori, "Optimized device processing for CW operation in GaAs based QCL," Electron., Lett., vol.39, pp. 1053-1055, Jul. 2003.
7. max = 150 K," IEEE J. Quantum Electmn., vol.40, no.6, pp. 665-672, Jun. 2004.
8. C. Faugeras, S. Forget, E. Boer-Duchemin, H. Page, J.-Y. Bengloan, O. Parillaud, M. Calligaro, C. Sirtori, M. Giovannini, and J. Faist, "HighPower Room Temperature Emission Quantum Cascade Lasers at λ = 9 μm," IEEE J. Quantum Electron.,vol.41, no.12, pp. 1430-1438, Dec. 2005.
9. 0.27TAs-AlAs quantum-cascade lasers," Appl. Phys. Lett., vol.85, pp. 1478-1480, Aug. 2004.
10. S. J. Pearton, C. R. Abernathy, M. B. Panish, R. A. Hamm, and L. M. Lunardi, "Implant-induced high-resistivity regions in InP and InGaAs," J. Appl. Phys., vol.66, pp. 656-662, Jul. 1989.
11. J. W. Tomm, F. Weik, R. Glatthaar, U. Vetter, J. Nurnus, A. Lambrecht, B. Spellenberg, M. Bassler, M. Behringer, and J. Luft, "A novel light-emitting structure for the 3-5 μm spectral range," Proc. SPIE, vol.5722, pp. 319-326, 2005.