High-power room temperature emission quantum cascade lasers at λ = 9 μm

IEEE Journal of Quantum Electronics

Volumn 41, Issue 12, 2005, Pages 1430-1438

  Faugeras, Clément ^a   Forget, Sébastien ^a,b   Boer Duchemin, Elizabeth ^c,d   Page, Hideaki ^c,e   Bengloan, Jean Yves ^c   Parillaud, Olivier ^c   Calligaro, Michel ^c   Sirtori, Carlo ^a   Giovannini, Marcella ^f   Faist, Jérôme ^f  

^a UNIVERSITÉ PARIS DIDEROT   (France)

^b UNIVERSITÉ PARIS 13   (France)

^c THALES RESEARCH AND TECHNOLOGY   (France)

^d UNIVERSITÉ PARIS SACLAY   (France)

^e Alpes Lasers SA   (Switzerland)

^f Universite de Neuchatel Institut de Physique   (Switzerland)

Author keywords

High power emission; InP based device; Quantum cascade laser

Indexed keywords

CASCADE CONNECTIONS; ELECTRIC CURRENTS; ELECTROPLATING; ENERGY DISSIPATION; GOLD PLATING; HIGH POWER LASERS; LIGHT EMISSION; QUANTUM ELECTRONICS; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE STRUCTURES; THERMODYNAMIC PROPERTIES;

HIGH POWER EMISSION; QUANTUM CASCADE LASERS; STANDARD RIDGE STRUCTURE;

SEMICONDUCTOR LASERS;

EID: 29244472847     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/JQE.2005.858797     Document Type: Article

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