Localisation of the p-n junction in poly-silicon thin-film diodes on glass by high-resolution cross-sectional electron-beam induced current imaging

Thin Solid Films

Volumn 515, Issue 7-8, 2007, Pages 3806-3809

  Inns, Daniel ^a   Puzzer, Tom ^a   Aberle, Armin G ^a  

^a UNIVERSITY OF NEW SOUTH WALES   (Australia)

Author keywords

EBIC; electron microscopy; FIB; silicon solar cells; thin films

Indexed keywords

ELECTRON BEAMS; ELECTRON MICROSCOPY; GRAIN BOUNDARIES; IMAGING TECHNIQUES; POLYSILICON; SEMICONDUCTING GLASS; SEMICONDUCTOR DIODES; SEMICONDUCTOR JUNCTIONS; SILICON SOLAR CELLS;

EBIC IMAGES; FOCUSED ION BEAM (FIB); IN POLY-SILICON THIN-FILM DIODES; JUNCTION LOCATION;

THIN FILM DEVICES;

EID: 33846903360     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2006.09.053     Document Type: Article

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