Study of the electric properties of BiFe1-xZrxO3+δ films prepared by the sol-gel process

Physica B: Condensed Matter

Volumn 391, Issue 1, 2007, Pages 103-107

  Liu, Hongri ^a,b   Liu, Zuli ^a   Yao, Kailun ^a  

^a HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

^b HUBEI NORMAL UNIVERSITY   (China)

Author keywords

BiFe1 xZrxO3+ films; Dielectric constant.; Ferroelectricity; Leakage conduction; Sol gel

Indexed keywords

BISMUTH COMPOUNDS; DEPOSITION; FERROELECTRICITY; INDIUM COMPOUNDS; PERMITTIVITY; REMANENCE; SOL-GELS;

INDIUM TIN OXIDE; LEAKAGE CONDUCTION; PYROCHLORE; REMNANT POLARIZATION;

THIN FILMS;

EID: 33846781649     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2006.09.003     Document Type: Article

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