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Volumn 35, Issue 11, 2006, Pages 1236-1237

N-type and ambipolar FET characteristics using pyrazinophenanthrolines linked with oligothiophenes

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EID: 33846698859     PISSN: 03667022     EISSN: None     Source Type: Journal    
DOI: 10.1246/cl.2006.1236     Document Type: Article
Times cited : (22)

References (26)
  • 3
    • 0034727092 scopus 로고    scopus 로고
    • c) D. Voss, Nature 2000, 407, 442.
    • (2000) Nature , vol.407 , pp. 442
    • Voss, D.1
  • 26
    • 33846703701 scopus 로고    scopus 로고
    • Detailed experimental procedure, OFET device fabrication procedure, UV-vis spectra of compounds 1-4, cyclic voltammograms of 1-4, FET performances of 1-3 and X-ray diffraction pattern (XRD) of 3 and 4 are available in Electronic Supporting Information, which is available electronically on the CSJ-Journal website, http://www.csj.jp/journals/chem-lett/.
    • Detailed experimental procedure, OFET device fabrication procedure, UV-vis spectra of compounds 1-4, cyclic voltammograms of 1-4, FET performances of 1-3 and X-ray diffraction pattern (XRD) of 3 and 4 are available in Electronic Supporting Information, which is available electronically on the CSJ-Journal website, http://www.csj.jp/journals/chem-lett/.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.