Perpendicular magnetic tunneling junction with double barrier layers for MRAM application

IEEE Transactions on Magnetics

Volumn 43, Issue 2, 2007, Pages 914-916

  Cabrera, A Canizo ^a   Chang, Che Hao ^a   Hsu, Chih Cheng ^a   Weng, Ming Chi ^a   Chen, C C ^b   Chao, C T ^b   Wu, J C ^b   Chang, Yang Hua ^a   Wu, Te Ho ^a  

^a NATIONAL YUNLIN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

^b NATIONAL CHANGHUA UNIVERSITY OF EDUCATION   (Taiwan)

Author keywords

Magnetic tunneling junction (MTJ); Magnetoresistance (MR)

Indexed keywords

ATOMIC FORCE MICROSCOPY; MAGNETIC FIELDS; MAGNETIC STORAGE; MAGNETORESISTANCE; MAGNETRON SPUTTERING; RANDOM ACCESS STORAGE;

BIAS VOLTAGE; CONDUCTING ATOMIC FORCE MICROSCOPE (CAFM); DOUBLE BARRIER LAYERS; MAGNETIC TUNNELING JUNCTION (MTJ);

TUNNEL JUNCTIONS;

EID: 33846677099     PISSN: 00189464     EISSN: None     Source Type: Journal    
DOI: 10.1109/TMAG.2006.888503     Document Type: Article

References (6)

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