45-32nm node photomask technology with water immersion lithography

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 6349 I, Issue , 2006, Pages

  Adachi, Takashi ^a   Inazuki, Yuichi ^a   Sutou, Takanori ^a   Morikawa, Yasutaka ^a   Toyama, Nobuhito ^a   Mohri, Hiroshi ^a   Hayashi, Naoya ^a  

^a DAI NIPPON PRINTING CO LTD   (Japan)

Author keywords

32 nm node; Double exposure; Immersion lithography; Lithography simulation

Indexed keywords

COMPUTER SIMULATION; LITHOGRAPHY; NANOTECHNOLOGY; SEMICONDUCTOR DEVICE MANUFACTURE;

DOUBLE DIPOLE LITHOGRAPHY(DDL); DOUBLE EXPOSURE; DOUBLE PATTERNING LITHOGRAPHY(DPL); LITHOGRAPHY SIMULATION; WATER IMMERSION LITHOGRAPHY;

MASKS;

EID: 33846625544     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.689740     Document Type: Conference Paper

References (4)

1. Takashi Adachi, et al., "Optimization of Alt-PSM structure for 45nm node ArF immersion lithography", Proc. of SPIE, Vol.5992, 2005.
2. Takashi Adachi, et al., "Lithographic performance comparison with various RET for 45-nm node with hyper NA", Proc. of SPIE, Vol.6283, 2006.
3. Stephen Hsu, et al., "Feasibility Study of Double Exposure Lithography for 65nm & 45nm node", Proc. of SPIE, Vol. 5853, 2005.
4. Judy Huckabay, et al., "Automatic Pitch Decomposition for Improved Process Window when Printing Dense Features at k1eff<0.20", Proc. of SPIE, Vol. 6283, 2006.