Lithographic performance comparison with various RET for 45-nm node with hyper NA

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 6283 II, Issue , 2006, Pages

  Adachi, Takashi ^a   Inazuki, Yuichi ^a   Sutou, Takanori ^a   Kitahata, Yasuhisa ^a   Morikawa, Yasutaka ^a   Toyama, Nobuhito ^a   Mohri, Hiroshi ^a   Hayashi, Naoya ^a  

^a DAI NIPPON PRINTING CO LTD   (Japan)

Author keywords

3D Simulation; 45 nm node; Immersion lithography; Mask topography effect

Indexed keywords

COMPUTER SIMULATION; ERROR ANALYSIS; OPTICAL RESOLVING POWER; OPTIMIZATION; PHASE SHIFT; PRINTING;

45-NM NODE; IMMERSION LITHOGRAPHY; MASK TOPOGRAPHY EFFECT;

LITHOGRAPHY;

LITHOGRAPHY; OPTIMIZATION; PRINTING;

EID: 33748060200     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.681813     Document Type: Conference Paper

References (5)

1. Takashi Adachi, et al., "Optimization of Alt-PSM structure for 45nm node ArF immersion lithography", Proc. of SPIE, Vol.5992, 2005.
2. Toru Komizo et al., "Evaluation of quartz dry etching profile for the PSM lithography performance", Proc. of SPIE, Vol.5853, 2005.
3. KT Park, et al., "Simulation of Quartz phase etch affect on performance of ArF chrome-less hard shifter for 65-nm technology", Proc. of SPIE, Vol. 5853, 2005.
4. Bradley Todd, et al., "Atomic Force Metrology and 3D Modeling of Micro-Trenching In Etched Photomask Features", Proc. of SPIE, Vol. 4409, 2001.
5. S. A. Anderson, et al., "Photomask Etch Profile Control of 65nm Chromeless Phase Lithography Masks using Scanning Probe Metrology", Proc. of SPIE, Vol. 5853, 2005.