Optimization of Alt-PSM structure for 45nm node ArF immersion lithography

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5992, Issue 2, 2005, Pages

  Adachi, Takashi ^a   Mesuda, Kei ^a   Toyama, Nobuhito ^a   Morikawa, Yasutaka ^a   Mohri, Hiroshi ^a   Hayashi, Naoya ^a  

^a DAI NIPPON PRINTING CO LTD   (Japan)

Author keywords

3D Simulation; 45nm node; Alternating Aperture PSM (Alt PSM); Immersion lithography

Indexed keywords

COMPUTER SIMULATION; ERROR CORRECTION; OPTIMIZATION; SILICON WAFERS;

3D SIMULATION; ALTERNATING APERTURE PSM (ALT-PSM); IMMERSION LITHOGRAPHY;

LITHOGRAPHY;

EID: 33644599744     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.633307     Document Type: Conference Paper

References (8)

1. M. D. Levenson et al., "Improving Resolution in Photolithography with a Phase-Shifting Mask", IEEE Transactions on Electron Devices, Vol. ED-29, No12, 1982.
2. Y. Morikawa, et al, "100nm-AU.PSM structure discussion for ArF lithography", Proc. of SPIE Vol.4409, 2001.
3. Kei Mesuda, et al., "Optimization of Alt-PSM structure for 1000nm-node ArF lithography (part-2)", Proc. of SPIE Vol.4754, 2002.
4. Y.Morikawa, et al, "Feasibility study of manufacturing process and quality control for the new Alternating PSM structure", Proc. of SPIE Vol. 4562, 2001
5. H. L. Cho, et al., "Practical Approach for AAPSM Image Imbalance Correction for Sub-100nm Lithography", Proc. of SPIE Vol.5130, 2003.
6. Y. Kojima, et al., "Study of Alternating Phase-Shift Mask structures for ArF lithography", Proc. of SPIE Vol.5446, 2004.
7. V. Philipsen et al., "Through-pitch characterization and printability for 65nm half-pitch alternating aperture phase shift applications", Proc. SPIE Vol. 5853, 2005.
8. K. Takeuchi et al., "Novel robusl optimisation method of lithographic conditions for correlative multilayers beyond 65 nm node", Proc. SPIE Vol. 5754, 2005.