Analysis of Cu/low-k bond pad delamination by using a novel failure index

Microelectronics Reliability

Volumn 47, Issue 2-3, 2007, Pages 179-186

  van Gils, M A J ^a   van der Sluis, O ^b   Zhang, G Q ^a,c   Janssen, J H J ^a   Voncken, R M J ^b  

^a NXP SEMICONDUCTORS   (Netherlands)

^b PHILIPS RESEARCH LABORATORIES   (Netherlands)

^c DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

BONDING; DELAMINATION; ELECTRONICS PACKAGING; FAILURE (MECHANICAL); OPTIMIZATION; PERMITTIVITY; THERMODYNAMIC PROPERTIES;

BUMPING; FAILURE INDEX; PAD DELAMINATION; WIRE BONDING;

CMOS INTEGRATED CIRCUITS;

EID: 33846590083     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2006.09.003     Document Type: Article

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