Investigation of thermal properties of SiC using photothermal method

Journal De Physique. IV : JP

Volumn 137, Issue , 2006, Pages 245-250

  Bodzenta, J ^a   Kazmierczak Balata A ^a  

^a SILESIAN UNIVERSITY OF TECHNOLOGY   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL STRUCTURE; LIGHT ABSORPTION; MATHEMATICAL MODELS; MULTILAYERS; PROBES; THERMAL DIFFUSION; THERMODYNAMIC PROPERTIES; WAVE PROPAGATION;

MIRAGE DETECTION; PHOTOTHERMAL METHOD; PROBING BEAM; THERMAL WAVE PROPAGATION;

SILICON CARBIDE;

EID: 33846578239     PISSN: 11554339     EISSN: 17647177     Source Type: Conference Proceeding    
DOI: 10.1051/jp4:2006137050     Document Type: Conference Paper

References (5)

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2. Kimoto T., Hirao T., Fujihira K., Kosugi H., Danno K., Matsunami H., Epitaxial growth of 4H-SiC(0338) and control of MOS interface, Applied Surface Science 216 (2003) 497-501.
3. Wiche G., Berns A., Steffes H., Obermeier E., Thermal analysis of silicon carbide based micro hotplates for metal oxide gas sensors, Sensors and Actuators, A 123-124 (2005) 12-17.
4. Kelly J. F., Barnes P., Fisher G. R., The use of Synchrotron Edge Topography to study polytype nearest neighbour relationships in SiC, Radiat. Phys. Chem. Vol. 45 (1995) 509-522.
5. Bodzenta J. and Mazur J., Photothermal cell for measurement of thermal parameters, SPIE Vol. 3581 (1998) 278-284.