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Volumn 2005, Issue , 2005, Pages 438-440
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High performance poly-Si thin film transistor (μeff ∼ 258cm2/Vs) fabricated on plastic substrates below 170°C
a a a a a a a a,b |
Author keywords
[No Author keywords available]
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Indexed keywords
ELECTRON MOBILITY;
FABRICATION;
INDUCTIVELY COUPLED PLASMA;
SEMICONDUCTING SILICON;
SPUTTER DEPOSITION;
SUBSTRATES;
FIELD EFFECT MOBILITY;
GATE OXIDES;
PLASTIC SUBSTRATES;
THIN FILM TRANSISTORS;
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EID: 33846567958
PISSN: 10831312
EISSN: None
Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper |
Times cited : (1)
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References (5)
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