SiOxNy thin film deposited by plasma enhanced chemical vapor deposition at low temperature using HMDS-O2-NH3-Ar gas mixtures

Surface and Coatings Technology

Volumn 201, Issue 9-11 SPEC. ISS., 2007, Pages 4957-4960

  Lee, J H ^a   Jeong, C H ^a   Lim, J T ^a   Zavaleyev, V A ^a   Kyung, S J ^a   Yeom, G Y ^a  

^a Sungkyunkwan University   (South Korea)

Author keywords

HMDS; PECVD; Siliconoxynitride; WVTR

Indexed keywords

DIFFUSION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; THIN FILM TRANSISTORS;

ORGANIC THIN FILM TRANSISTOR; SILICONOXYNITRIDE; WATER VAPOR TRANSMISSION RATE;

SEMICONDUCTING SILICON COMPOUNDS;

DIFFUSION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING SILICON COMPOUNDS; THIN FILM TRANSISTORS;

EID: 33846465863     PISSN: 02578972     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.surfcoat.2006.07.075     Document Type: Article

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