Preparation of A1N: Mn films by metalorganic chemical vapor deposition for thin film electroluminescent devices

Physica Status Solidi C: Conferences

Volumn , Issue 7, 2003, Pages 2274-2277

  Hara, K ^a   Sato, A ^a   Azumada, K ^a   Atsumori, T ^a   Shirator, M ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

D-ELECTRONS; ELECTROLUMINESCENCE PROPERTIES; GLASS SUBSTRATES; MN CONCENTRATIONS; POLYCRYSTALLINE; ROOM TEMPERATURE; SUBSTRATE TEMPERATURE; THIN-FILM ELECTRO-LUMINESCENT DEVICES;

ALUMINUM NITRIDE; AMORPHOUS FILMS; AMORPHOUS MATERIALS; ELECTROLUMINESCENCE; MANGANESE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NITRIDES; OPTOELECTRONIC DEVICES; SUBSTRATES; THIN FILM DEVICES; VAPORS;

FILM PREPARATION;

EID: 33645585098     PISSN: 16101634     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1002/pssc.200303318     Document Type: Conference Paper

References (8)

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