Micro-photoluminescence study of nitrogen delta-doped GaAs grown by metalorganic vapor phase epitaxy

Journal of Crystal Growth

Volumn 298, Issue SPEC. ISS, 2007, Pages 73-75

  Endo, Y ^a   Tanioka, K ^a   Hijikata, Y ^a   Yaguchi, H ^a   Yoshida, S ^a   Yoshita, M ^b   Akiyama, H ^b   Ono, W ^b   Nakajima, F ^b   Katayama, R ^b   Onabe, K ^b  

^a SAITAMA UNIVERSITY   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

Author keywords

A1. Doping optical microscopy; A2. Metalorganic vapor phase epitaxy; B2. Semiconducting III V materials

Indexed keywords

ELECTRON TRAPS; METALLORGANIC VAPOR PHASE EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DOPING; SPECTRUM ANALYSIS;

DOPING OPTICAL MICROSCOPY; ISOELECTRONIC TRAPS; MICROPHOTOLUMINESCENCE SPECTRA (PL); PHOTON EMITTING DEVICES;

SEMICONDUCTOR GROWTH;

EID: 33846448766     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.10.019     Document Type: Article

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