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Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 127-128, Issue , 1997, Pages 437-441

Optical characterization of low-energy nitrogen-ion doped GaAs

(11) Shima, Takayuki a,b Makita, Yunosuke a Kimura, Shinji a Iida, Tsutomu a Sanpei, Hirokazu a,c Yamaguchi, Misao a,d Kudo, Kazuhiro b Tanaka, Kuniaki b Kobayashi, Naoto a Sandhu, Adarsh c Hoshino, Yasushi d

a ELECTROTECHNICAL LABORATORY (Japan)

b CHIBA UNIVERSITY (Japan)

c TOKAI UNIVERSITY (Japan)

d NIPPON INSTITUTE OF TECHNOLOGY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; EXCITONS; ION BEAMS; LIGHT MEASUREMENT; MOLECULAR BEAM EPITAXY; NITROGEN; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH;

ION BEAM EPITAXY;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0031547917 PISSN: 0168583X EISSN: None Source Type: Journal
DOI: 10.1016/S0168-583X(96)01119-6 Document Type: Article

Times cited : (12)

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