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Volumn 2006, Issue , 2006, Pages 519-522

Avalanche breakdown protection by adaptive output power control

Author keywords

Adaptive control; Avalanche breakdown; Over voltage protection; Power amplifiers

Indexed keywords

ADAPTIVE CONTROL SYSTEMS; CELLULAR RADIO SYSTEMS; ELECTRIC BREAKDOWN; POWER AMPLIFIERS; POWER CONTROL; SEMICONDUCTING SILICON; TRANSISTORS;

EID: 33846381663     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper
Times cited : (17)

References (4)
  • 1
    • 6644223174 scopus 로고    scopus 로고
    • Current Status and Future Treads of SiGe BiCMOS Tcchnology
    • Nov
    • D. L. Harama, "Current Status and Future Treads of SiGe BiCMOS Tcchnology", IEEE Transactions on Electron Devices, vol. 48, No 11, Nov. 2001, pp, 2575-2594.
    • (2001) IEEE Transactions on Electron Devices , vol.48 , Issue.11 , pp. 2575-2594
    • Harama, D.L.1
  • 2
    • 0034250026 scopus 로고    scopus 로고
    • A 3.2V Operation Single-Chip Dual Band AlGaAs/GaAs HBT MMIC Power Amplifier with Active Feedback Circuit Technique
    • August
    • K. Yamamoto et al., "A 3.2V Operation Single-Chip Dual Band AlGaAs/GaAs HBT MMIC Power Amplifier with Active Feedback Circuit Technique'', IEEE Journal of Solid-State Circuits, Vol. 35, No 8, August 2000, pp. 1109-1120.
    • (2000) IEEE Journal of Solid-State Circuits , vol.35 , Issue.8 , pp. 1109-1120
    • Yamamoto, K.1
  • 3
    • 0041592529 scopus 로고    scopus 로고
    • A Higk Performance RF Power Amplifier with Protection against Load Mismatches
    • A. Scuderi, F. Carrara, A. Castorina, and G. Palmisano, "A Higk Performance RF Power Amplifier with Protection against Load Mismatches", IEEE MTT-S Digest, 2003, pp. 699-702.
    • (2003) IEEE MTT-S Digest , pp. 699-702
    • Scuderi, A.1    Carrara, F.2    Castorina, A.3    Palmisano, G.4
  • 4
    • 0035307349 scopus 로고    scopus 로고
    • Influence of Impact-Ionization-Induced Instabilites on the Maximum Usable Output Voltage of Si-Bipolar Transistors
    • Apiil
    • M. Rickelt, H. M. Rein and E. Rose. "Influence of Impact-Ionization-Induced Instabilites on the Maximum Usable Output Voltage of Si-Bipolar Transistors". IEEE Transaction on electron devices, vol. 48, No 4, Apiil 2001, pp. 774-783.
    • (2001) IEEE Transaction on electron devices , vol.48 , Issue.4 , pp. 774-783
    • Rickelt, M.1    Rein, H.M.2    Rose, E.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.