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Volumn 47, Issue 11, 2006, Pages 2835-2841
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Three temperature model for nonequilibrium energy transfer in semiconductor films irradiated with short pulse lasers
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Author keywords
Acoustic phonons; Auger recombination; Carriers; Direct band gap; Gallium arsenide (GaAs); Indirect band gap; Longitudinal optical (LO) phonons; Nonequilibrium; Short pulse lasers; Silicon; SRH (Shockely Read Hall)
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Indexed keywords
ACOUSTICS;
CARRIER CONCENTRATION;
ENERGY TRANSFER;
LASER PULSES;
MATHEMATICAL MODELS;
PHONONS;
SEMICONDUCTING GALLIUM COMPOUNDS;
SEMICONDUCTOR DEVICES;
AUGER RECOMBINATION;
BANDGAP SEMICONDUCTORS;
DIRECT-BAND-GAP;
NONEQUILIBRIUM ENERGY TRANSFER;
PULSE LASER IRRADIATION;
SEMICONDUCTOR FILMS;
THIN FILMS;
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EID: 33846295211
PISSN: 13459678
EISSN: None
Source Type: Journal
DOI: 10.2320/matertrans.47.2835 Document Type: Article |
Times cited : (12)
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References (22)
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