X-ray irradiation and bias effects in fully-depleted and partially-depleted SiGe HBTs fabricated on CMOS-compatible SOI

IEEE Transactions on Nuclear Science

Volumn 53, Issue 6, 2006, Pages 3182-3186

  Bellini, Marco ^a   Jun, Bongim ^a   Chen, Tianbing ^b,c   Cressler, John D ^a   Marshall, Paul W ^d   Chen, Dakai ^e   Schrimpf, Ronald D ^e   Fleetwood, Daniel M ^e   Cai, Jin ^f  

^a GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^b GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^c NATIONAL SEMICONDUCTOR CORPORATION   (United States)

^d NASA GODDARD SPACE FLIGHT CENTER   (United States)

^e VANDERBILT UNIVERSITY   (United States)

^f IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

Heterojunction bipolar transistors; Radiation effects; SiGe HBT; Silicon on insulator technology; SOI; TCAD

Indexed keywords

CMOS INTEGRATED CIRCUITS; DOPING (ADDITIVES); ELECTRIC BREAKDOWN; HETEROJUNCTION BIPOLAR TRANSISTORS; PROTON IRRADIATION; RADIATION EFFECTS; SEMICONDUCTING SILICON COMPOUNDS; X RAYS;

AVALANCHE MULTIPLICATION; CURRENT FLOW; SOI TRANSISTORS; X-RAY IRRADIATION;

SILICON ON INSULATOR TECHNOLOGY;

EID: 33846289563     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2006.885795     Document Type: Conference Paper

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