Experiments on the linewidth-enhancement factor of a vertical-cavity surface-emitting laser

IEEE Journal of Quantum Electronics

Volumn 43, Issue 1, 2007, Pages 6-15

  Fordell, Thomas ^a   Lindberg, Åsa Marie ^a  

^a UNIVERSITY OF HELSINKI   (Finland)

Author keywords

Quantum well lasers; Semiconductor lasers

Indexed keywords

DISTRIBUTED FEEDBACK LASERS; MODULATION; QUANTUM WELL LASERS;

LINEWIDTH MEASUREMENTS; OPTICAL INJECTION; VERTICAL-CAVITY SURFACE-EMITTING LASER;

SEMICONDUCTOR LASERS;

EID: 33846091498     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/JQE.2006.884583     Document Type: Article

References (79)

1. C. H. Henry, "Theory of the linewidth of semiconductor lasers," IEEE J. Quantum Electron., vol. QE-18, no. 2, pp. 259-264, Feb. 1982.
2. M. Osiński and J. Buus, "Linewidth broadening factor in semiconductor lasers - An overview," IEEE J. Quantum Electron., vol. QE-23, no. 1, pp. 9-29, Jan. 1987.
3. L. D. Landau and E. M. Lifshitz, Electrodynamics of Continuous Media. Bristol, U.K.: Pergamon, 1960, ch. IX.
4. K. G. Libbrecht and J. L. Hall, "A low-noise high-speed diode laser current controller," Rev. Sci. Instrum., vol. 64, no. 8, pp. 2133-2135, 1993.
5. Z. Toffano, "Investigation of threshold transition in semiconductor lasers," IEEE J. Sel. Topics Quantum Electron., vol. 3, no. 2, pp. 485-490, Feb. 1997.
6. Z. Toffano, A. Destrez, C. Birocheau, and L. Hassine, "New linewidth enhancement determination method in semiconductor lasers based on spectral analysis above and below threshold," Electron. Lett., vol. 28, no. 1, pp. 9-11, 1992.
7. R. Hui, S. Benedetto, and I. Montrosset, "Near threshold operation of semiconductor lasers and resonant-type laser amplifiers," IEEE J. Quantum Electron., vol. 29, no. 6, pp. 1488-1497, Jun. 1993.
8. T. Fordell, Z. Toffano, and Å. M. Lindberg, "A vertical-cavity surface-emitting laser at threshold," IEEE Photon. Technol. Lett., vol. 18, no. 21, pp. 2263-2265, Nov. 2006.
9. A. Villafranca, J. A. Lázaro, I. Salinas, and I. Garcés, "Measurement of the linewidth enhancement factor in DFB lasers using a high-resolution optical spectrum analyzer," IEEE Photon. Technol. Lett., vol. 17, no. 11, pp. 2268-2270, Nov. 2005.
10. S. Barland, P. Spinicelli, G. Giacomelli, and F. Marin, "Measurement of working parameters of an air-post vertical-cavity surface-emitting laser," IEEE J. Quantum Electron., vol. 41, no. 10, pp. 1235-1243, Oct. 1994.
11. J.-M. Liu and T. B. Simpson, "Four-wave mixing and optical modulation in a semiconductor laser," IEEE J. Quantum Electron., vol. 30, no. 4, pp. 135-151, Apr. 1994.
12. K. Kikuchi, "Lineshape measurement of semiconductor lasers below threshold," IEEE J. Quantum Electron., vol. 24, no. 9, pp. 1814-1817, Sep. 1988.
13. D. Rodríguez, L. Borruel, I. Esquivas, H. Wenzel, B. Sumpf, and G. Erbert, "CW technique for measurement of linewidth enhancement factor: application to 735-nm tensile-strained GaAsP quantum-well laser," IEEE Photon. Technol. Lett., vol. 16, no. 6, pp. 1432-1434, Jun. 2004.
14. A. E. Siegman, Lasers. Sausalito, CA: University Sciences Books, 1986, ch. 13, pp. 513-515.
15. C. Harder, K. Vahala, and A. Yariv, "Measurement of the linewidth enhancement factor α of semiconductor lasers," Appl. Phys. Lett., vol. 42, no. 4, pp. 328-330, 1983.
16. F. Deveaux, Y. Sorel, and J. F. Kerdiles, "Simple measurement of fiber dispersion and chirp parameter of intensity modulated light emitter," J. Lightw. Technol., vol. 11, no. 12, pp. 1937-1940, Dec. 1993.
17. F. Deveaux, Y. Sorel, and J. F. Kerdiles, "Chirp measurement and transmission experiment at 10 GBit/s with Wannier-Stark modulator," Electron. Lett., vol. 29, no. 9, pp. 814-816, 1993.
18. A. Røyset, L. Bjerkan, D. Myhre, and L. Hafskjær, "Use of dispersive optical fiber for characterisation of chirp in semiconductor lasers," Electron. Lett., vol. 30, no. 9, pp. 710-712, 1994.
19. R. C. Srinivasan and J. C. Cartledge, "On using fiber transfer functions to characterize laser chirp and fiber dispersion," IEEE Photon. Technol. Lett., vol. 7, no. 11, pp. 1327-1329, Nov. 1995.
20. B. Kowalski, J. Debeau, and R. Boittin, "A simple and novel method for measuring the chirp parameter of an intensity modulated light source," IEEE Photon. Technol. Lett., vol. 11, no. 6, pp. 700-702, Nov. 1999.
21. U. Krüger and K. Krüger, "Simultaneous measurement of the linewidth enhancement factor α, and FM and AM response of a semiconductor laser," J. Lightw. Technol., vol. 13, no. 4, pp. 592-597, Apr. 1995.
22. N. Storkfelt, B. Mikkelsen, D. S. Olesen, M. Yamaguchi, and K. E. Stubkjaer, "Measurement of carrier lifetime and linewidth enhancement factor for 1.5 μm ridge-waveguide laser amplifier," IEEE Photon. Technol. Lett., vol. 3, no. 7, pp. 632-634, Jul. 1991.
23. H. Tsuchida, T. Tako, and M. Ohtsu, "A novel technique for measuring the frequency deviation of semiconductor lasers under direct modulation," Jpn. J. Appl. Phys., vol. 22, pp. L19-L21, 1983.
24. M. Imai and K. Kawakita, "Measurement of direct frequency modulation characteristics of laser diodes by Michelson interferometry," Appl. Opt., vol. 29, no. 3, pp. 348-353, 1990.
25. L. Olofsson and T. G. Brown, "Frequency dependence of the chirp factor in 1.5 μm distributed feedback semiconductor lasers," IEEE Photon. Technol. Lett., vol. 4, no. 7, pp. 688-691, Apr. 1992.
26. T. L. Koch and J. E. Bowers, "Nature of wavelength chirp in directly modulated semiconductor lasers," Electron. Lett., vol. 20, no. 25/26, pp. 1038-1039, 1984.
27. 2 pulses: Application to phase-amplitude-coupling factor measurements," Opt. Lett, vol. 20, no. 10, pp. 1160-1162, 1995.
28. A. Takada, T. Sugie, and M. Saruwatari, "High-speed picosecond optical pulse compression from gain-switched 1.3-μm distributed feedback-laser diode (DFB-LD) through highly dispersive single-mode fiber," J. Lightw. Technol., vol. 5, no. 10, pp. 1525-1533, Oct. 1987.
29. R. A. Saunders, J. P. King, and I. Hardcastle, "Wideband chirp measurement technique for high bit rate sources," Electron. Lett., vol. 30, no. 16, pp. 1336-1338, 1994.
30. J. Jeong and Y. K. Park, "Accurate determination of transient chirp parameter in high speed digital lightwave transmitters," Electron. Lett., vol. 33, no. 7, pp. 605-606, 1997.
31. S. Bouchoule, N. Stelmakh, J.-M. Lourtioz, M. Cavalier, and C. Kazmierski, "Phase-amplitude coupling factor of single mode gain-switched InGaAsP laser diodes," IEEE Photon. Technol. Lett., vol. 4, no. 9, pp. 979-859, Sep. 1992.
32. L. Bjerkan, L. Hafskjær, and D. Myhre, "Measurement of laser parameters for simulation of high-speed fiberoptic systems," J. Lightw. Technol., vol. 14, no. 5, pp. 839-850, May 1996.
33. 4 laser," Opt. Lett., vol. 30, pp. 3036-3038, 2005.
34. S. Valling, T. Fordell, and Å. M. Lindberg, "Maps of the dynamics of an optically injected solid state laser," Phys. Rev. A, vol. 72, p. 033810, 2005.
35. S. Melnik, G. Huyet, and A. V. Uskov, "The linewidth enhancement factor α of quantum dot semiconductor lasers," Opt. Exp., vol. 14, no. 7, pp. 2950-2955, 2006.
36. Y. Arakawa and A. Yariv, "Fermi energy dependence of linewidth enhancement factor of GaAlAs buried heterostructure laser," Appl. Phys. Lett., vol. 47, no. 9, pp. 905-907, 1985.
37. B. Möller, E. Zeeb, U. Fiedler, T. Hackbarth, and K. J. Ebeling, "Linewidth enhancement factor of Vertical-cavity surface-emitting laser diodes," IEEE Photon. Technol. Lett., vol. 6, no. 8, pp. 921-923, Aug. 1994.
38. R. Schimpe, J. E. Bowers, and T. L. Koch, "Characterisation of frequency response of 1.5 μm InGaAs DFB laser diode and InGaAs pin photodiode by heterodyne measurement technique," Electron. Lett., vol. 22, no. 9, pp. 453-454, 1986.
39. T. Fordell and Å. M. Lindberg, "Numerical stability maps of an optically injected semiconductor laser," Opt. Commun., vol. 242, pp. 613-622, 2004.
40. T. B. Simpson and J. M. Liu, "Phase and amplitude characteristics of nearly degenerate four-wave mixing in Fabry-Perot semiconductor lasers," J. Appl. Phys., vol. 73, no. 5, pp. 2587-2589, 1993.
41. H. Li, "Rf-modulation measurement of linewidth enhancement factor and nonlinear gain of vertical-cavity surface-emitting lasers," IEEE Photon. Technol. Lett., vol. 8, no. 12, pp. 1594-1596, Dec. 1996.
42. R. Schatz, "Dynamics of spatial hole burning effects," IEEE J. Quantum Electron., vol. 31, no. 11, pp. 1981-1993, Nov. 1995.
43. P. Vankwikelberge, "Analysis of carrier-induced FM response of DFB lasers: Theoretical and experimental case studies," IEEE J. Quantum Electron., vol. 25, no. 11, pp. 2239-2254, Nov. 1989.
44. G. Morthier, "An accurate rate-equation description for DFB lasers and some interesting solutions," IEEE J. Quantum Electron., vol. 33, no. 2, pp. 231-237, Feb. 1997.
45. W. Huang, X. Li, and T. Makino, "Analytical formulas for modulation responses of semiconductor DFB lasers," IEEE J. Quantum Electron., vol. 31, no. 5, pp. 842-851, May 1995.
46. R. F. S. Ribeiro, J. R. F. da Rocha, A. V. T. Cartaxo, H. J. A. da Silva, B. Franz, and B. Wedding, "FM response of quantum-well lasers taking into account carrier transport effects," IEEE Photon. Technol. Lett., vol. 7, no. 8, pp. 857-859, Aug. 1995.
47. E. Peral, W. K. Marshall, and A. Yariv, "Precise measurement of semiconductor laser chirp using effect of propagation in dispersive fiber and application to simulation of transmission through fiber gratings," J. Lightw. Technol., vol. 16, no. 10, pp. 1874-1880, Oct. 1998.
48. E. Peral and A. Yariv, "Measurement and characterization of laser chirp of multiquantum-well distributed-feedback lasers," IEEE Photon. Technol. Lett., vol. 11, no. 3, pp. 307-309, Mar. 1999.
49. T. B. Simpson, F. Doft, E. Strzelecka, J. J. Liu, W. Chang, and G. J. Simonis, "Gain saturation and the linewidth enhancement factor in semiconductor lasers," IEEE Photon. Technol. Lett., vol. 13, no. 8, pp. 776-778, Aug. 2001.
50. R. Hui, A. Meccozi, A. D'Ottavi, and P. Spano, "Novel measurement technique of α factor in DFB semiconductor lasers by injection locking," Electron. Lett., vol. 26, no. 14, pp. 997-998, 1990.
51. M. P. van Exter and J. P. Woerdman, "Determination of α factor of Fabry-Pérot-type semiconductor laser by injection locking," Electron. Lett., vol. 28, no. 17, pp. 1607-1608, 1992.
52. G. H. M. van Tartwijk, G. Muijres, D. Lenstra, M. P. Van Exter, and J. P. Woerdman, "The semiconductor-laser beyond the locking range of optical-injection," Electron. Lett., vol. 29, no. 2, pp. 137-138, 1993.
53. N. M. Al-Hosiny, I. D. Henning, and M. J. Adams, "Correlation of electron density changes with optical frequency shifts in optically injected semiconductor lasers," IEEE J. Quantum Electron., vol. 42, no. 6, pp. 570-580, Jun. 2006.
54. M. P. van Exter, C. Biever, and J. P. Woerdman, "Effect of optical-injection on bias voltage and spectrum of a semiconductor-laser," IEEE J. Quantum Electron., vol. 29, no. 11, pp. 2771-2779, Nov. 1993.
55. K. Iiyama, K.-I. Hayashi, and Y. Ida, "Simple method for measuring the linewidth enhancement factor of semiconductor lasers by optical injection locking," Opt. Lett, vol. 17, no. 16, pp. 1128-1130, 1992.
56. K. E. Chlouverakis, K. M. Al-Aswad, I. D. Henning, and M. J. Adams, "Determining laser linewidth parameter from Hopf bifurcation minimum in lasers subject to optical injection," Electron. Lett., vol. 39, no. 16, pp. 1185-1187, 2003.
57. A. Gavrielides, V. Kovanis, and T. Erneux, "Analytical stability boundaries for a semiconductor laser subject to optical injection," Opt. Commun., vol. 136, no. 3-4, pp. 253-256, 1997.
58. Y. Yu, G. Giuliani, and S. Donati, "Measurement of the linewidth enhancement factor of a semiconductor laser based on the optical feedback self-mixing effect," IEEE Photon. Technol. Lett., vol. 16, no. 4, pp. 990-992, 2004.
59. C. S. Shin, M. Teshima, and M. Ohtsu, "Novel measurement method of linewidth enhancement factor in semiconductor lasers by optical injection," Electron. Lett., vol. 25, no. 1, pp. 27-28, 1989.
60. R. Lang, "Injection locking properties of a semiconductor laser," IEEE J. Quantum Electron., vol. QE-18, no. 6, pp. 976-983, Jun. 1982.
61. P. Laurent, A. Clairon, and C. Bréant, "Frequency noise analysis of optically self-locked diode lasers," IEEE J. Quantum Electron., vol. 25, no. 6, pp. 1131-1142, Jun. 1989.
62. B. W. Hakki and T. L. Paoli, "CW degradation at 300 K of GaAs double-heterostructure junction laser. II. Electronic gain," J. Appl. Phys., vol. 44, no. 9, pp. 4113-4119, 1973.
63. B. W. Hakki and T. L. Paoli, "Gain spectra in GaAs double-heterostructure injection lasers," J. Appl. Phys., vol. 46, no. 3, pp. 1299-1305, 1975.
64. I. D. Henning and J. V. Collins, "Measurement of the semiconductor laser linewidth broadening factor," Electron. Lett., vol. 27, no. 22, pp. 927-929, 1983.
65. D. T. Cassidy, "Technique for measurement of the gain spectra of semiconductor diode lasers," J. Appl. Phys., vol. 56, no. 11, pp. 3096-3099, 1984.
66. D. Hofstetter and J. Faist, "Measurement of semiconductor laser gain and dispersion curves utilizing Fourier transforms of the emission spectra," IEEE Photon. Technol. Lett., vol. 11, no. 11, pp. 1372-1374, Nov. 1999.
67. L. Fu, L. Wu, and H. Schweizer, "The extension of gain and accurate determination of the quasi-Fermi-level separation from measured amplified spontaneous emission spectra," Appl. Phys. Lett., vol. 75, no. 20, pp. 3069-3071, 1999.
68. W.-H. Guo, Y.-Z. Huang, C.-L. Han, and L.-J. Yu, "Measurement of gain spectrum for Fabry-Pérot semiconductor lases by the Fourier Transfrom method with a deconvolution process," IEEE J. Quantum Electron., vol. 39, no. 6, pp. 716-721, Jun. 2003.
69. W.-H. Guo, Q.-Y. Lu, Y.-Z. Huang, and L.-J. Yu, "Fourier series expansion method for gain measurement from amplified spontaneous emission spectra of Fabry-Pérot semiconductor lasers," IEEE J. Quantum Electron., vol. 40, no. 2, pp. 123-129, Feb.. 2004.
70. H. Wang and D. T. Cassidy, "Gain measurements of Fabry-Pérot semiconductor lasers using a nonlinear least-squares fitting method," IEEE J. Quantum Electron., vol. 41, no. 4, pp. 532-540, Apr. 2005.
71. C. H. Henry, R. A. Logan, and K. A. Bertness, "Spectral dependence of the change in refractive index due to carrier injection in GaAs lasers," J. Appl. Phys., vol. 52, no. 7, pp. 4457-4461, 1981.
72. G. Hunziker, W. Knop, P. Unger, and C. Harder, "Gain, refractive index, linewidth enhancement factor from spontaneous emission of strained GaInP quantum-well lasers," IEEE J. Quantum Electron., vol. 31, no. 4, pp. 643-646, Apr. 1995.
73. A. Schonfelder, J. D. Ralston, K. Czotscher, S. Weissner, J. Rosenzweig, and E. C. Larkins, "Optical gain and spontaneous emission in InGaAs/ GaAs multiple quantum well laser diodes," J. Appl. Phys., vol. 80, no. 1, pp. 582-584, 1996.
74. T. Keating, S. H. Park, J. Minch, S. L. Chuang, and T. Tanbun-Ek, "Optical gain based on fundamental properties and comparison with many-body theory," J. Appl. Phys., vol. 80, no. 6, pp. 2945-2952, 1999.
75. L. Wu, "Accurate determination of quasi-Fermi-level separation of semiconductor lasers," Appl. Phys. Lett., vol. 76, no. 8, pp. 964-966, 2000.
76. L. Wu and L. Fu, "Novel technique for the systematic measurement of gain, aboslute refractive index spectra, and other parameters of semiconductor lasers," IEEE J. Quantum Electron., vol. 36, no. 6, pp. 721-727, Jun. 2000.
77. G. B. Ren, P. Blood, and J. M. Rorison, "Deconvolution of optical broadening in semiconductors," Phys. Lett. A, vol. 332, no. 5-6, pp. 503-511, 2004.
78. L.-Z. Wu, W. Tian, and G. Feng, "Determination of quasi-fermi-level separation of semiconductor lasers from amplified spontaneous emission," Chin. Phys. Lett., vol. 21, no. 7, pp. 1359-1361, 2004.
79. G. M. Lewis, P. M. Smotown, J. D. Thomson, H. D. Summers, and P. Blood, "Measurement of true spontaneous emission spectra from the facet of diode laser structures," Appl. Phys. Lett., vol. 80, no. 1, pp. 1-3, 2002.