The effect of doping by IV-family elements on the electronic structure and electrical characteristics of Sb2O5

Central European Journal of Physics

Volumn 5, Issue 1, 2007, Pages 103-109

  Du, Juan ^a,b   Ji, Zhenguo ^a,b   Wang, Chao ^b  

^a HANGZHOU DIANZI UNIVERSITY   (China)

^b ZHEJIANG UNIVERSITY   (China)

Author keywords

Density functional theory; Dopingby IV family elements; Electric characteristic; Electronic structure; Sb2O5

Indexed keywords

EID: 33845954408     PISSN: 18951082     EISSN: 16443608     Source Type: Journal    
DOI: 10.2478/s11534-006-0037-7     Document Type: Article

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