Efficient calculation of quasi-bound state tunneling in CMOS devices

International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

Volumn 2005, Issue , 2005, Pages 35-38

  Karner, M ^a   Gehring, A ^b   Kosina, H ^a   Selberherr, S ^a  

^a INSTITUTE FOR MICROELECTRONICS   (Austria)

^b IBM MICROELECTRONICS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTATIONAL METHODS; EIGENVALUES AND EIGENFUNCTIONS; HAMILTONIANS; QUANTUM THEORY; RESONANT TUNNELING;

BOUNDARY METHODS; PERFECTLY MATCHED LAYER (PML); QUASI BOUND STATES (QBS); STATE TUNNELING;

CMOS INTEGRATED CIRCUITS;

EID: 33845888511     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/sispad.2005.201466     Document Type: Conference Paper

References (9)

1. A. Gehring and S. Selberherr, in Proc. Intl. Conf. on Simulation of Semiconductor Processes and Devices (München, 2004), pp. 25-28.
2. E. Cassan, P. Dollfus, S. Galdin, and P. Hesto, IEEE Trans.Electron Devices 48, 715 (2001).
3. R. Tsu and L. Esaki, Appl.Phys.Lett. 22, 562 (1973).
4. A. Dalla Serra et al., IEEE Trans.Electron Devices 48, 1811 (2001).
5. C. L. Fernando and W. R. Frensley, J.Appl.Phys. 76, 2881 (1994).
6. E. Cassan, J.Appl.Phys. 87, 7931 (2000).
7. R. Clerc, A. Spinelli, G. Ghibaudo, and G. Pananakakis, J.Appl.Phys. 91, 1400 (2002).
8. S. Odermatt, M. Luisier, and B. Witzigmann, J.Appl.Phys. 97, 046104 (2005).
9. F. Stern, Phys.Rev.B 5, 4891 (1972).