Design and fabrication of low-threshold 1.55-μm graded-index separate-confinement-heterostructure strained InGaAsP single-quantum-well laser diodes

IEEE Journal of Quantum Electronics

Volumn 33, Issue 7, 1997, Pages 1141-1147

  Yamamoto, Norio ^a   Yokoyama, Kiyoyuki ^a   Yamanaka, Takayuki ^a   Yamamoto, Mitsuo ^a  

^a NTT CORPORATION   (Japan)

Author keywords

Current; Indium; Quantum well lasers; Semiconductor lasers; Strain

Indexed keywords

CARRIER CONCENTRATION; CHARGE CARRIERS; ENERGY GAP; GRADIENT INDEX OPTICS; HETEROJUNCTIONS; LASER RESONATORS; NUMERICAL ANALYSIS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR QUANTUM WELLS;

OPTICAL CONFINEMENTS; SEPARATE CONFINEMENT HETEROSTRUCTURES (SCH); SINGLE QUANTUM WELLS (SQW);

QUANTUM WELL LASERS;

EID: 0031192284     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/3.594876     Document Type: Article

References (20)

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