Sacrificial Al0.8Ga0.2As etching for microstructures in integrated optoelectronic devices

Journal of Applied Physics

Volumn 100, Issue 11, 2006, Pages

  Guan, Baolu ^a   Guo, Xia ^a   Liang, Ting ^a   Gu, Xiaoling ^a   Deng, Jun ^a   Guo, Jing ^a   Yang, Hao ^a   Lin, Qiaoming ^a   Shen, Guangdi ^a  

^a BEIJING UNIVERSITY OF TECHNOLOGY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; ETCHING; MICROSTRUCTURE; OPTOELECTRONIC DEVICES; OXIDATION; REACTION KINETICS;

ANALYTICAL FORMULAS; PROCESS PARAMETERS; VOLUME RATIOS;

SEMICONDUCTING ALUMINUM COMPOUNDS;

EID: 33845798506     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2395682     Document Type: Article

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