All-epitaxial current- And mode-confined AlGaAs GaAs VCSEL

Electronics Letters

Volumn 40, Issue 21, 2004, Pages 1336-1337

  Lu, D ^a   Ahn, J ^a   Deppe, D G ^a  

^a The University of Texas at Austin   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM COMPOUNDS; CURRENT DENSITY; DOPING (ADDITIVES); EPITAXIAL GROWTH; HEAT RESISTANCE; LITHOGRAPHY; PHASE SHIFT; PROBLEM SOLVING; THERMAL EXPANSION;

DIFFUSION PROCESS; MATERIAL SYSTEMS; THERMAL LENSING; VERTICAL-CAVITY SURFAC-EMITTING LASERS (VCSEL);

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 7544226841     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20046159     Document Type: Article

References (9)

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