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Volumn 253, Issue 6, 2007, Pages 3317-3325

The influence of substrate temperature variation on tungsten oxide thin film growth in an HFCVD system

Author keywords

Structural and optical properties; Substrate temperature variation; Tungsten oxide

Indexed keywords

AMORPHOUS MATERIALS; CHEMICAL VAPOR DEPOSITION; EPITAXIAL GROWTH; IMAGE ANALYSIS; SURFACE ROUGHNESS; TUNGSTEN COMPOUNDS;

EID: 33845795353     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2006.07.026     Document Type: Article
Times cited : (27)

References (26)
  • 21
    • 33845771923 scopus 로고    scopus 로고
    • C. Jacob, Growth and characterization of epitaxial 3C-SiC films on Si for electronic applications, Ph.D. Thesis, Case Western Reserve University, USA, 1997, p. 73.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.