Bumpless interconnect of ulrafine Cu electrodes by surface activated bonding (SAB) method

Electronics and Communications in Japan, Part II: Electronics (English translation of Denshi Tsushin Gakkai Ronbunshi)

Volumn 89, Issue 12, 2006, Pages 34-42

  Shigetou, Akitsu ^a   Itoh, Toshihiro ^a   Suga, Tadatomo ^a  

^a UNIVERSITY OF TOKYO   (Japan)

Author keywords

Bumpless interconnect; CMP; Damascene process; Surface activated bonding (SAB)

Indexed keywords

BONDING; CHEMICAL MECHANICAL POLISHING; COPPER; DATA STORAGE EQUIPMENT; ELECTRODES; FLASH MEMORY; OHMIC CONTACTS; REACTIVE ION ETCHING;

BUMPLESS INTERCONNECT; COMPACT FLASH MEMORY CARD MODULE; CONTACT RESISTANCE; DAMASCENE PROCESS; INTERPOSER; OXYGEN PLASMA ASHING; SURFACE ACTIVATED BONDING;

SEMICONDUCTOR DEVICE MANUFACTURE;

EID: 33845783399     PISSN: 8756663X     EISSN: None     Source Type: Journal    
DOI: 10.1002/ecjb.20247     Document Type: Article

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