Phonon relaxation rates in silicon thin films determined by molecular dynamics

Thermomechanical Phenomena in Electronic Systems -Proceedings of the Intersociety Conference

Volumn 2006, Issue , 2006, Pages 1185-1191

  Goicochea, Javier V ^a   Madrid, Marcela ^b   Amon, Cristina H ^a  

^a CARNEGIE MELLON UNIVERSITY   (United States)

^b CARNEGIE MELLON UNIVERSITY   (United States)

Author keywords

Molecular dynamics; Normal modes; Relaxation rates; Relaxation times; Silicon; Thermal conductivity; Thin films

Indexed keywords

DIELECTRIC THIN FILMS; NORMAL MODES; RELAXATION RATES; RELAXATION TIMES; SEMICONDUCTOR THIN FILMS;

ACOUSTIC VARIABLES CONTROL; MOLECULAR DYNAMICS; NANOSTRUCTURED MATERIALS; PHONONS; RELAXATION PROCESSES; SILICON; THERMAL CONDUCTIVITY;

THIN FILMS;

EID: 33845584724     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ITHERM.2006.1645479     Document Type: Conference Paper

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