Power semiconductors

ABB Review

Volumn , Issue 4, 2006, Pages 34-39

  Linder, Stefan ^a  

^a ABB SWITZERLAND LTD   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

ANODES; CATHODES; CHARGE CARRIERS; ELECTRIC BREAKDOWN; ELECTRIC CONDUCTIVITY; ELECTRIC FIELD EFFECTS; PARAMETER ESTIMATION; SEMICONDUCTOR DOPING; SILICON;

BLOCKING CAPABILITY; CHARGE CARRIER DISTRIBUTION; POWER SEMICONDUCTORS;

SEMICONDUCTOR MATERIALS;

EID: 33845535100     PISSN: 10133119     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Review

References (8)

1. K. Eriksson: "HVDC Light™ and Development of Voltage Source Converters". Proc. IEEE/PES T&D Latin American Conf., Sao Paolo, 2002
2. T. Laska, F. Pfirsch, F. Hirler, J. Niedermeyr, C. Schaeffer, T. Schmidt: "1200V-Trench-IGBT Study with Short Circuit SOA". Proc. ISPSD '98, 433-436, Kyoto, 1998
3. M. Mori, Y. Uchino, J. Sakano, H. Kobayashi: "A Novel High-Conductivity IGBT (HiGT) with a Short Circuit Capability". Proc. ISPSD '98, 429-432, Kyoto, 1998
4. Linder, Stefan: Power Semiconductors. EPFL Press / CRC Press, 2006. ISBN 2-940222-09-6 (EPFL Press) or 0-8247-2569-7 (CRC Press)
5. S. Dewar et al: "Soft Punch Through (SPT) - Setting new Standards in 1200V IGBT". Proc. PCIM Nuremberg, 2000
6. T. Laska et al: "The Field Stop IGBT (FS IG-BT) - A New Power Device Concept with a Great Improvement Potential". Proc. ISPSD 2000, 355-358, Toulouse, 2000
7. D. Gottet et al: "Numerical Simulations for Electromagnetic Power Module Design". Proc. ISPSD '06, 209-212, Naples, 2006
8. M. Rahimo, A. Kopta, S. Eicher: "Next Generation Planar IGBTs with SPT+".Power Electronics Europe, Ausgabe 06, 2005