Development of materials integration strategies for electroceramic film-based devices via complementary in situ and ex situ studies of film growth and interface processes

Integrated Ferroelectrics

Volumn 46, Issue , 2002, Pages 295-306

  Auciello, O ^a   Dhote, A M ^b   Ramesh, R ^b   Liu, B T ^b   Aggarwal, S ^b   Mueller, A H ^c   Suvarova, N A ^c   Irene, E A ^c  

^a ARGONNE NATIONAL LABORATORY   (United States)

^b UNIVERSITY OF MARYLAND   (United States)

^c The University of North Carolina at Chapel Hill   (United States)

Author keywords

Diffusion barrier; Ferroelectric memories; High frequency devices; Interfaces; Materials integration; PZT and BST films

Indexed keywords

DIFFUSION BARRIER; DYNAMIC RANDOM ACCESS MEMORIES (DRAM); ELECTROCERAMIC FILMS; FERROELECTRIC MEMORIES; ION SCATTERING; MATERIALS INTEGRATION; RECOIL SPECTROSCOPY;

CERAMIC MATERIALS; INTERFACES (MATERIALS); OXIDATION; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY; X RAY PHOTOELECTRON SPECTROSCOPY;

FILM GROWTH;

EID: 33845490027     PISSN: 10584587     EISSN: 16078489     Source Type: Conference Proceeding    
DOI: 10.1080/10584580215376     Document Type: Article

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