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Volumn 50, Issue 1, 2007, Pages 59-67

Linearity of bulk-controlled inverter ring VCO in weak and strong inversion

Author keywords

FDSM; Inverter ring; Linear modulation; VCO; Weak inversion

Indexed keywords

COMPUTER SIMULATION; DELTA SIGMA MODULATION; ELECTRIC INVERTERS; FREQUENCY MODULATION; THERMAL EFFECTS; THRESHOLD VOLTAGE; TRANSISTORS;

EID: 33845486492     PISSN: 09251030     EISSN: 15731979     Source Type: Journal    
DOI: 10.1007/s10470-006-9370-4     Document Type: Conference Paper
Times cited : (17)

References (11)
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  • 2
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  • 4
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    • Multifunction subthreshold gate used for a low power full adder
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    • (2004) Proc. Norchip Conference , vol.2004 , pp. 44-47
    • Aunet, S.1    Oelmann, B.2    Lande, T.S.3    Berg, Y.4
  • 5
    • 0026907824 scopus 로고
    • Voltage controlled oscillators using complementary current mirror inverter
    • R.R. Pal, H.N. Acharya, S. Kai, and N.B. Chakrabarti, "Voltage controlled oscillators using complementary current mirror inverter." IEE Electronics Letters, vol. 28, no. 18, pp. 1701-1702, 1992.
    • (1992) IEE Electronics Letters , vol.28 , Issue.18 , pp. 1701-1702
    • Pal, R.R.1    Acharya, H.N.2    Kai, S.3    Chakrabarti, N.B.4
  • 6
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    • A general theory of phase noise in electrical oscillators
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    • (1998) IEEE JSSC , vol.33 , Issue.2 , pp. 179-194
    • Hajimiri, A.1    Lee, T.H.2
  • 7
    • 23944476207 scopus 로고    scopus 로고
    • Substrate voltage and accumulation-mode MOS varactor capacitance
    • S.A. Wartenberg and J.R. Hauser, "Substrate voltage and accumulation-mode MOS varactor capacitance." IEEE Transactions on Electron Devices, vol. 52, no. 7, pp. 1563-1567, 2005.
    • (2005) IEEE Transactions on Electron Devices , vol.52 , Issue.7 , pp. 1563-1567
    • Wartenberg, S.A.1    Hauser, J.R.2
  • 10
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    • MOS modelling by analytical approximations. I. Subthreshold current and threshold voltage
    • W. Fichtner and H.W. Potzl, "MOS modelling by analytical approximations. I. Subthreshold current and threshold voltage." International Journal of Electronics, vol. 46, no. 1, pp. 33-55, 1979.
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  • 11
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    • Mostet carrier mobility model based on gate oxide thickness, threshold and gate voltages
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    • Yoshida, M.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.