Thermal memory effects modeling and compensation in RF power amplifiers and predistortion linearizers

IEEE Transactions on Microwave Theory and Techniques

Volumn 51, Issue 12, 2003, Pages 2427-2433

  Boumaiza, Slim ^a   Ghannouchi, Fadhel M ^a  

^a POLY GRAMES RESEARCH CENTER   (Canada)

Author keywords

Behavior model; Distortion; Electrothermal; Measurements; Memory effects; RF power amplifier (PA)

Indexed keywords

BANDWIDTH; CODE DIVISION MULTIPLE ACCESS; FIELD EFFECT TRANSISTORS; GLOBAL SYSTEM FOR MOBILE COMMUNICATIONS; INTERMODULATION;

ADJACENT CHANNEL POWER RATIO; ERROR VECTOR MAGNITUDE; INTERMODULATION DISTORTION; PREDISTORTION LINEARIZERS;

POWER AMPLIFIERS;

EID: 0742286801     PISSN: 00189480     EISSN: None     Source Type: Journal    
DOI: 10.1109/TMTT.2003.820157     Document Type: Article

References (10)

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