Thermal stability of epitaxial aluminum on In0.53Al0.47As schottky diodes grown by molecular beam epitaxy

Journal of Applied Physics

Volumn 83, Issue 10, 1998, Pages 5282-5288

  Pilkington, S J ^a   Missous, M ^a  

^a UNIVERSITY OF MANCHESTER   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0346978665     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.367352     Document Type: Article

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