Atomistic modeling of dislocation activity in nanoindented GaAs

Applied Surface Science

Volumn 253, Issue 2, 2006, Pages 833-840

  Jian, Sheng Rui ^a   Fang, Te Hua ^b   Chuu, Der San ^a   Ji, Liang Wen ^b  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b NATIONAL FORMOSA UNIVERSITY   (Taiwan)

Author keywords

GaAs; Molecular dynamics simulations; Nanoindentation; Tersoff potential

Indexed keywords

ATOMIC FORCE MICROSCOPY; INDENTATION; MOLECULAR DYNAMICS; NANOSTRUCTURED MATERIALS; NUCLEATION; PLASTIC DEFORMATION; TRANSMISSION ELECTRON MICROSCOPY; VELOCITY MEASUREMENT;

DISLOCATION ACTIVITY; MOLECULAR DYNAMICS SIMULATIONS; NANOINDENTATION; TERSOFF POTENTIAL;

GALLIUM COMPOUNDS;

EID: 33845435191     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2006.01.022     Document Type: Article

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