Nanoindentation of silicon nitride: A multimillion-atom molecular dynamics study

Applied Physics Letters

Volumn 82, Issue 1, 2003, Pages 118-120

  Walsh, Phillip ^a   Omeltchenko, Andrey ^a   Kalia, Rajiv K ^a   Nakano, Aiichiro ^a   Vashishta, Priya ^a   Saini, Subhash ^b  

^a University of Southern California ^*  (United States)

^b NASA AMES RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; HARDNESS; INDENTATION; MOLECULAR DYNAMICS; SILICON NITRIDE; TEMPERATURE CONTROL;

NNANOINDENTATION;

SEMICONDUCTING FILMS;

EID: 0037421384     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1535263     Document Type: Article

References (25)

1. B. Bhushan, in Handbook of Micro/Nano Tribology, edited by B. Bhushan (CRC Press, New York, 1995), p. 321.
2. H. M. Pollock, in Friction, Lubrication, and Wear Technology, edited by P. J. Blau (ASM Int'l., Materials Park, Ohio, 1992), Vol. 18, p. 419.
3. V. Tikare and A. H. Heuer, J. Am. Ceram. Soc. 74, 593 (1991).
4. N. A. Burnham and R. J. Colton, J. Vac. Sci. Technol. A 7, 2906 (1989).
5. A. Noy, D. V. Vezenov, and C. M. Lieber, Annu. Rev. Mater. Sci. 27, 381 (1997).
6. G. U. Lee, D. A. Kidwell, and R. J. Colton, Langmuir 10, 354 (1994).
7. R. McKendry, M.-E. Theoclitou, T. Rayment, and C. Abell, Nature (London) 391, 566 (1998).
8. G. U. Lee, L. A. Chrisey, and R. J. Colton, Science 266, 771 (1994).
9. J. A. Harrison, C. T. White, R. J. Colton, and D. W. Brenner, Surf. Sci. 271, 57 (1992).
10. J. Belak, D. B. Boercker, and I. F. Stowers, Mater. Res. Soc. Bull. 18(5), 55 (1993).
11. U. Landman, W. D. Luedtke, N. A. Burnham, and R. J. Colton, Science 248, 454 (1990).
12. N. Binggeli and J. R. Chelikowsky, Phys. Rev. Lett. 69, 2220 (1992).
13. R. M. Wentzcovitch, C. da Silva, and J. R. Chelikowsky, Phys. Rev. Lett. 80, 2149 (1998).
14. G. S. Smith, E. B. Tadmor, and Efthimios Kaxiras, Phys. Rev. Lett. 84, 1260 (2000).
15. J. S. Kallman, W. G. Hoover, C. G. Hoover, A. J. De Groot, S. M. Lee, and F. Wooten, Phys. Rev. B 47, 7705 (1993).
16. F. F. Abraham, D. Schneider, B. Land, D. Lifka, J. Skovira, J. Gerner, and M. Rosenkrantz, J. Mech. Phys. Solids 45, 1461 (1997).
17. A. Omeltchenko, M. E. Bachlechner, A. Nakano, R. K. Kalia, P. Vashishta, I. Ebbsjö, A. Madhukar, and P. Messina, Phys. Rev. Lett. 84, 318 (2000).
18. M. E. Bachlechner, A. Omeltchenko, A. Nakano, R. K. Kalia, and P. Vashishta, Appl. Phys. Lett. 72, 1969 (1998).
19. P. Vashishta, R. K. Kalia, A. Nakano, W. Li, and I. Ebbsjö, in Amorphous Insulators and Semiconductors, edited by M. F. Thorpe and M. I. Mitkova (Kluwer Academic, Netherlands, 1997), p. 151.
20. A. Nakano, R. K. Kalia, and P. Vashishta, Phys. Rev. Lett. 75, 3138 (1995).
21. M. P. Allen and D. J. Tildesley, Computer Simulation of Liquids (Oxford University Press, New York, 1987), p. 257.
22. K. S. Cheung and S. Yip, J. Appl. Phys. 70, 5688 (1991).
23. H. Suematsu, J. J. Petrovic, and T. E. Mitchell, Mater. Res. Soc. Symp. Proc. 287, 449 (1992).
24. D. Chakraborty and J. Mukerji, J. Mater. Sci. 15, 3051 (1980).
25. A. R. Fee, R. Segabache, and E. L. Tobolski, in ASME Metals Handbook, Ninth edition, edited by J. R. Davis and S. K. Refsnes (ASME, Metals Park, OH, 1985), Vol. 8, p. 90.