Evaluation of 193-nm immersion resist without topcoat

Journal of Microlithography, Microfabrication and Microsystems

Volumn 5, Issue 3, 2006, Pages

  Wei, Yayi ^a   Stepanenko, Nickolay ^b   Laessig, Antje ^b   Voelkel, Lars ^b   Sebald, Michael ^b  

^a Qimonda North America   (United States)

^b QIMONDA DRESDEN GMBH AND CO OHG   (Germany)

Author keywords

193 nm immersion lithography; Postrinse; Prerinse; Process window; Resists

Indexed keywords

BINARY INTENSITY MASK; DEIONIZED WATER; IMMERSION RESIST; POSTRINSE; PROCESS WINDOW; RESIST PATTERN; TOPCOATS;

LEACHING; MASKS; PHASE SHIFT; PHOTOLITHOGRAPHY;

COATINGS;

EID: 33845425809     PISSN: 15371646     EISSN: None     Source Type: Journal    
DOI: 10.1117/1.2358128     Document Type: Article

References (8)

1. W. Conley, R. J. LeSuer, F. F. Fan, A. J. Bard, C. Taylor, P. Tsiartas, G. Willson, A. Romano, and R. Dammel, "Understanding the photoresist surface-liquid interface for ArF immersion lithography," Proc. SPIE 5753, 64-76 (2005).
2. H. Kohno, H. Nagasaka, H. Akiyama, K. Nakano, S. Watanabe, and S. Owa, "Resist properties for scanners: leaching of chemicals and surface condition for scanning," presentation at the SEMATECH 2nd 193-nm Immersion Symp., Brugge, Belgium, Sep. 14, 2005.
3. M. Kocsis, D. Van Den Heuvel, R. Gronheid et al., "Immersion specific defect mechanisms: findings and recommendations for their control," Proc. SPIE 6154 615409 (2006).
4. Y. Wei, K. Petrillo, S. Brandl, F. Goodwin, P. Benson, R. Housley, and U. Okoroanyanwu, "Selection and evaluation of developer-Soluble topcoat for 193 nm immersion lithography," Proc. SPIE 6153, 615306 (2006).
5. V. Philipsen and R. Jonckheere, "Printability of topography in alternating aperture phase-shift masks," Proc. SPIE 5567, 587-595 (2004).
6. A. Kroyan and H. Liu, "Effects of alternating aperture PSM design on image imbalance for 65 nm technology," Proc. SPIE 4889, 1217-1226 (2002).
7. R. R. Dammel, G. Pawlowski, A. Romano, and F. M. Hoilihan, "Resist component leaching in 193 immersion lithography," Proc. SPIE 5753, 95-101 (2005).
8. I. Pollentier, M. Ercken, P. Foubert, and S. Y. Cheng, "Resist profile control in immersion lithography using scatterometry measurements," Proc. SPIE 5754, 129-140 (2005).