Formation of p-n Junctions in High-Purity Germanium by Phosphorus Ion Implantation

Inorganic Materials

Volumn 32, Issue 12, 1996, Pages 1258-1261

  Devyatykh, G G ^a   Vasil'ev, V K ^b   Gavva, V A ^a   Gusev, A V ^a   Danilov, Yu A ^b   Zharkov, E S ^b   Maksimov, G A ^b  

^a INSTITUTE OF CHEMISTRY OF HIGH PURITY SUBSTANCES   (Russian Federation)

^b LOBACHEVSKY STATE UNIVERSITY OF NIZHNY NOVGOROD   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 2742523294     PISSN: 00201685     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (14)

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8. Kolyada, V.M., Zaichenko, A.K., and Dmitrenko, R.V., Rentgenospektral'nyi analiz s ionnym vozbuzhdeniem (X-ray Spectroscopy with Ionic Excitation). Moscow: Atomizdat, 1978.
9. Konopleva, R.F. and Ostroumov. V.I., Vzaimodeistvie zaryazhennykh chastits vysokikh energii s germaniem i kremnien (Interaction of High-Energy Charged Particles with Germanium and Silicon), Moscow: Atomizdat, 1975.
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11. Benourhazi, K. and Ponpon, J.P., Implantation of Phosphorus and Arsenic Ions in Germanium, Nucl. Instrum. Methods Phys. Res., Sect. B, 1992, vol. 71, pp. 406-411.
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13. Burenkov, A.F., Komarov, F.F., Kumakhov, M.A., and Temkin, M.M., Prostranstvennye raspredeleniya energii, vydelennoi v kaskade atomnykh stolknovenii v tverdykh telakh (Spatial Distributions of the Energy Released in a Sequence of Atomic Collisions in Solids), Moscow: Energoatomizdat, 1985.
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