Thermal conductivity, dislocation density and GaN device design

Superlattices and Microstructures

Volumn 40, Issue 4-6 SPEC. ISS., 2006, Pages 338-342

  Mion, C ^a   Muth, J F ^a   Preble, Edward A ^b   Hanser, Drew ^b  

^a North Carolina State University   (United States)

^b KYMA TECHNOLOGIES INC   (United States)

Author keywords

3 omega; Gallium nitride; HVPE GaN; Thermal conductivity

Indexed keywords

CATHODOLUMINESCENCE; DISLOCATIONS (CRYSTALS); EPITAXIAL GROWTH; GALLIUM NITRIDE; LIGHT SCATTERING; THERMAL CONDUCTIVITY;

DISLOCATION DENSITY; HETEROEPITAXIALLY GROWTH; HIGH POWER TRANSISTOR DEVICES; PHONON SCATTERING;

SEMICONDUCTOR DEVICES;

EID: 33845191981     PISSN: 07496036     EISSN: 10963677     Source Type: Journal    
DOI: 10.1016/j.spmi.2006.07.017     Document Type: Article

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